 PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFAC
专利摘要:
The invention relates to a photonic device (1) comprising: a support (120); an intermediate layer (420); an optical guiding stage (200) comprising a waveguide (210) and a first to fifth waveguide section (211, 212, 213, 214, 215). The photonic device (1) further comprises a first dielectric layer (110) covering the optical guiding stage (200) and a gain structure (310) in contact with the first dielectric layer (110). The second and fourth waveguide sections (212, 214) and the first and second ends of the gain structure (310) form a first and a second optical transition region between a laser hybrid waveguide, and respectively the first and fifth waveguide sections (211, 215). A Bragg grating pattern is provided on a first portion of the thickness (el) of the third waveguide section (213) remote from the gain structure (310). 公开号:FR3078835A1 申请号:FR1852120 申请日:2018-03-12 公开日:2019-09-13 发明作者:Sylvie Menezo；Torrey Thiessen 申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA； IPC主号:
专利说明:
PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE DESCRIPTION TECHNICAL AREA The invention relates to the field of optoelectronics and photonics devices. The invention relates more specifically to a photonic device comprising a waveguide intended to accommodate several silicon photonic components and a hybrid laser on silicon comprising a gain medium capable of emitting light. PRIOR STATE OF THE ART The manufacture of hybrid photonic devices integrating silicon photonic components and at least one hybrid laser on silicon comprising a gain medium capable of emitting light, such as a gain medium made of III-V semiconductor materials, must necessarily take into account takes into account the design constraints with regard to the dimensioning of the first silicon waveguide accommodating the silicon photonic components and of the second silicon waveguide used in the composition of the hybrid laser. Such a hybrid laser generally comprises: a gain structure comprising at least one gain medium capable of emitting light, the gain structure being overlying a section of the second silicon waveguide to form therewith a hybrid waveguide, a optical feedback structure making it possible to form a resonant cavity comprising the gain medium of said gain structure, and optical transitions between the second silicon waveguide and the hybrid waveguide. The term “gain structure” is understood above and in the rest of this document to be a structure made of semiconductor materials suitable for providing light emission which can in particular be stimulated in order to provide laser type emission when such a structure is coupled. to an optical feedback structure, such as a Bragg grating distributed along said gain structure. Such a gain structure comprises at least one gain medium, which is the material in which the light emission is generated, and, on both sides, a first and second zone each having a conductivity type opposite to that on the other to authorize an electric pumping of the gain medium. In a conventional application of lasers with semiconductor materials, in particular for providing an emission in the wavelength ranges of infrared and in particular at wavelengths 1310 nm and 1550 nm, the first and second zones and the medium to be gain are formed by epitaxial growth on indium phosphide InP or gallium arsenide GaAs substrates. Indeed, the small mesh difference of these materials with their quaternary alloys makes it possible to provide first and second zones and a gain medium of good crystalline quality ideal for optimizing the laser emission efficiency. The gain medium of such a gain structure may comprise a succession of quantum wells providing the emission of light. In order to increase the optical mode confinement factor in quantum wells, these are generally surrounded by two barrier layers. As an alternative to quantum wells, the gain medium can also include quantum dots. In order to form such quantum wells, or quantum dots, and in a conventional configuration of such a hybrid laser, the gain medium can comprise at least two semiconductor materials selected for example from the group comprising indium phosphide InP, l gallium arsenide GaAs, indium arsenide InAs, galliumindium phosphide arsenide InGaAsP, gallium-indium-aluminum arsenide InGaAlAs, aluminum-gallium arsenide AlGaAs and arsenide-phosphide d indium InAsP and their alloys. Similarly, the first and second zones can be produced in at least one semiconductor material selected from the group comprising indium phosphide InP, gallium arsenide GaAs, gallium-indium arsenide InGaAs, indium arsenide InAs, gallium-indium arsenide phosphide InGaAsP, galliumindium-aluminum arsenide InGaAlAs, aluminum nitride-indium arsenide InGaAsN, aluminum-gallium arsenide AIGaAs and indium arsenide-phosphide InAsP and their alloys, one of the first and second zones being of a first type of conductivity in which the majority carriers are the electrons, the other being of a second type of conductivity in which the majority carriers are the holes. Such gain structures can be either of the "vertical" type or of the "lateral" type. In the first case, that is to say a gain structure of the "vertical" type, the first zone, the gain medium and the second zone consist of a stack of layers on the surface of a support. In such a configuration, the thickness of the stack forming the gain structure is generally between 1 to 3 μm. In the second case, that is to say a gain structure of the "lateral" type, the first zone, the gain medium, and the second zone follow one another in contact along a support. The typical thickness of a gain structure of the lateral type is of the order of 500 nm. The term “optical feedback structure” is understood above and in the rest of this document to be an optical structure produced in a waveguide and making it possible to form a guiding resonant cavity comprising the gain medium. Thus, the optical field goes back and forth in the waveguide of the cavity between the ends of this same resonant cavity, this to generate a stimulated emission from the gain medium. In the context of the invention, the laser is a so-called Distributed Feedback Laser known by the acronym DFB laser. In such a configuration, the optical feedback structure is constituted by a distributed reflector, such as a Bragg grating, under or in the gain structure, forming a selective wavelength mirror. S. Keyvaninia and his coauthors describe in their work published in 2013 in the scientific journal "Optics Letters" volume 38 number 24 pages 5434 to 5437, a photonic device comprising such a laser. As illustrated in FIG. 1 a) of this document reproduced here in FIG. 1, this device comprises: a support 120, an intermediate layer 420 made of silicon dioxide SiO 2 , the intermediate layer 420 being in contact with the support 120, a layer of silicon material 201, a first waveguide 210 formed in the layer 201, first to fifth waveguide sections 211, 212, 213, 214, 215 formed in layer 201, the first to the fifth waveguide section 211, 212,213, 214, 215 succeeding each other by being optically connected in pairs, and being optically connected to the first waveguide 210 by at at least one of the first and fifth waveguide sections 211, 215, a dielectric filler material 205 so as to form with the waveguide and the first to the fifth waveguide sections a wave guide stage 200 of the photonic device 1, a first dielectric layer 110, formed in this document by benzocyclobutene (better known by the acronym BCB), the first dielectric layer 110 covering the optical guide stage opposite from the intermediate layer 420, a gain structure 310 in contact with the first dielectric layer 110 and comprising at least one gain medium 321 capable of emitting light, the gain structure 310 having a central portion in look of the third waveguide section 213 and a first and a second end facing the second and fourth waveguide section 212, 214, thus, the central portion of the gain structure 310 forms with the third section waveguide 213 a laser hybrid waveguide, the second and fourth waveguide sections 212, 214 and the first and second ends of the gain structure 310 forming first and second optical transition zones d an optical mode between the laser hybrid waveguide and the first and fifth waveguide sections 211 respectively, 215. In order to form a DFB laser, the third waveguide section comprises a structured structure, said structure forming a Bragg network 223 distributed under the gain structure to form a feedback structure and a resonant cavity comprising at least a portion gain medium 321. According to a conventional configuration, the Bragg grating 223 described in this document is constituted, as shown in FIG. 1, by an alternation of relatively wide cross sections, said wide edges of width WL and of relatively cross section narrow, called narrow edges of width WN less than WL, of the third waveguide section. In the configuration of the Bragg network 223 shown in FIG. 1, the width WN is zero. It should be noted that in the remainder of this document, a Bragg grating 223 whose width WN of narrow edges are zero is noted Bragg grating with corrugation or vertical structuring. The structuring forming the Bragg grating is arranged in a part of the thickness of the third waveguide section 213 which is in contact with the dielectric layer 110. With such a Bragg grating, it is possible to define a counter-reaction force named kappa and denoted k g ,. This counter-reaction force can be calculated, if we consider wide and narrow edges of the same length, from the following equation: (DK g = 2 (neff2- neffl) λ With λ the resonance wavelength of the resonant cavity, neffl and neff2 the effective indices of the optical mode guided in the hybrid waveguide at the levels of wide edges and narrow edges respectively (i.e. , the width WN being zero, the valleys in Figure 1). S. Keyvaninia and his coauthors have shown by the graph of FIG. 2 provided in their work which is repeated in FIG. 2, that the kappa value increases when the thickness D of the first dielectric layer 110 decreases. To make their calculation, S. Keyvaninia and his coauthors used the following configuration: thickness of the silicon layer 201 of 400 nm, thickness of the first waveguide 210 of 220 nm, thickness of the second waveguide, whose third section of waveguide 213, of 400 nm and thickness of the edges fixed for first calculations (noted 400 nm / 150 nm) at 250 nm, for second calculations (noted 400 nm / 180 nm) at 220 nm and for third calculations (noted 400 nm / 200 nm) at 200 nm. The graph represented in FIG. 2 reports the calculation of kappa as a function of the thickness D for these three types of corrugation (edge thicknesses of 250 nm, 220 nm and 200 nm). The minimum value of kappa is thus equal to 40 cm 1 , for a thickness of the intermediate layer 420 of 100 nm, and reaches nearly 200 cm 1 for a thickness of 50 nm of this same layer and exceeds 400 cm 1 for a thickness of 20 nm. The authors of this publication also show that it is possible to reduce the feedback force of the Bragg grating by modifying the volume ratio between zones of the third waveguide section having the wide edges and those having the narrow edges, by modifying the thickness of the edges but this variation remains limited, as shown in Figure 2. However, this feedback force must be adapted as a function of the dimensioning of the gain structure 310. In fact, for a good operation of a laser comprising a gain structure having a length of 500 μm and 1000 μm respectively, it is known that the feedback force must be between 20 and 40 cm 1 respectively and between 10 and 20 cm 1 . It will be noted that, more generally, the product Kappa by the length of the gain structure must be between 1 and 2. Thus, due to these dimensioning constraints, it is not possible with the usual configuration of a photonic device, such as that proposed by S. Keyvaninia and his co-authors, to provide a DFB laser having both a gain structure with a significant length and a thickness of the first dielectric layer 110 relatively small, that is to say less than 100 nm. H. Duprez and his co-authors, in the context of their work published in 2016 in the scientific review "IEEE Photonics Technology Letter" Volume 28 number 18 pages 1920 to 1923 also made the same observations. In the photonic device described in their work, the configuration used is as follows: thickness of the silicon layer 201 of 500 nm, thickness of the first waveguide 210 of 300 nm, thickness of the second waveguide of 500 nm. The Bragg 223 grating is produced by alternating structuring of wide edges of width WL alternately equal to 770, 800, and 830 nm and of narrow edges of width all in turn equal to 370 and 600 nm, the edges being formed in a thickness of 200 nm of the silicon layer 20 which is in contact with the dielectric layer 110 It should be noted that in the rest of this document, such a configuration in which the Bragg grating 223 has a non-zero width WN of narrow edges is denoted Bragg grating with lateral corrugation or structuring. In the same way as for a vertical corrugation, it is possible to define for a lateral structuring a force of feedback of the Bragg grating from equation (1). It should be noted that the authors are required here to choose wide edges having a width WL around 800 nm because, as is known to those skilled in the art, to minimize the optical losses between the waveguide laser hybrid and the first and second zones of optical transitions, for an active structure 310 of thickness approximately 3 μm, and for second, third and fourth waveguide sections 212, 213 and 214 of total thickness 500 nm, it is preferable to have a width WL of the wide edges greater than about 800 nm. Therefore, it is therefore not possible to benefit from the variation in feedback forces of the Bragg grating, shown in Figure 2 (see in particular Figure 2a) of the article by H. Duprez and these coauthors , which allows the reduction of the width WL of the wide edges. H. Duprez and his coauthors show that it is possible to reduce the feedback force of the Bragg grating by modifying the volume ratio between the wide edges and the narrow edges, by increasing the width of the narrow edge. However, this variation remains limited, as shown by the comparison of Figures 2b and 2c of this document. Thus even an optimization of this ratio does not authorize the supply of a DFB laser having both a gain structure with a significant length, that is to say greater than 50 μm, and a thickness of the first dielectric layer 110 relatively weak, i.e. less than 100 nm. It will also be noted that the photonic device taught by H. Duprez and these coauthors has a feedback force exhibiting high variability in the width dispersions of the wide and narrow edges. Similarly, document EP 2988378 presents an alternative configuration to such a photonic device, the device which it discloses has the same drawback and does not make it possible to achieve, for small thicknesses of the first dielectric layer separating the third guide section of the gain structure, at a Bragg grating feedback force suitable for gain structure lengths greater than 50 µm. Thus in existing devices and for thicknesses of the first dielectric layer less than 100 nm, the counter-reaction force of the Bragg 223 grating cannot be adjusted to a sufficiently low value, even by modifying the volume ratio between the wide edges and narrow. STATEMENT OF THE INVENTION The invention aims to remedy this drawback and thus aims to provide a photonic device capable of comprising a laser comprising a gain structure with a length greater than 50 μm, even 500 μm, or even 1000 μm, this with a first dielectric layer which, separating the gain structure from the third waveguide section in which a distributed Bragg grating is formed, has a thickness less than or equal to 120 nm or even 50 nm or even 10 nm. To this end, the invention relates to a photonic device comprising: a support, an intermediate layer in contact with the support comprising at least one dielectric material, a first waveguide, a first to a fifth section of distinct waveguides of the first waveguide, the first to the fifth waveguide section succeeding each other by being optically connected in pairs, and being optically connected to the first waveguide by at least one of the first and of the fifth waveguide section, a dielectric filler material, to form with the first waveguide and the first to fifth waveguide section a waveguiding stage of the photonic device, the stage of optical guidance comprising a first face by which it is in contact with the intermediate layer and a second face opposite to the first face, a first dielectric layer comprising a dielectric material, the first dielectric layer covering the optical guide stage on its second face, a gain structure in contact with the first dielectric layer and comprising at least one gain medium capable of emitting light, the gain structure having a central portion in look of the third waveguide section and a first and second end facing the second and fourth waveguide sections, thus, the central portion of the gain structure forms with the third waveguide section a laser hybrid waveguide, the second and fourth waveguide sections and the first and second ends of the gain structure forming a first and a second optical transition zone of an optical mode between the waveguide hybrid laser and respectively the first and fifth waveguide sections, wherein the third section is in contact with the intermediate layer and includes a struct uration arranged only in a first part of its thickness, said structuring forming a Bragg grating distributed under the gain structure to form a feedback structure and a resonant cavity comprising at least part of the gain medium this so as to form a laser optically connected to the waveguide by at least one of the first and fifth waveguide sections, wherein the second and fourth waveguide sections are in contact with the intermediate layer on a portion of the intermediate layer which consists only of dielectric materials. The third waveguide section includes at least a second portion of its thickness which separates the first dielectric layer and the first portion of the thickness of the third waveguide section. In such a photonic device, the arrangement of the structuring forming the Bragg grating over a first part of the thickness of the third waveguide section located at a distance from the first dielectric layer, and therefore at a distance from the structure gain, provides a significant reduction in the counteraction force of the Bragg grating vis-à-vis the prior art. This reduction is sufficient to result in a suitable feedback force for gain structures of large length, that is to say greater than 50 μm, even for the first dielectric layers of small thickness, that is to say - say less than or equal to 100 nm. It will also be noted that such an arrangement of the Bragg network also makes it possible to make the value of kappa less sensitive to the inhomogeneities of widths of the wide and narrow edges. The first part of the thickness of the third waveguide section can be in contact with the intermediate layer. The third waveguide section may include at least a third portion of its thickness, said third portion of thickness being in contact with the intermediate layer. The thickness of the first dielectric layer may be less than or equal to 100 nm, the thickness of the first dielectric layer being preferably less than or equal to 90 nm, or even 70 nm, or even 20 nm. A device having such a first dielectric layer particularly benefits from the advantages of the invention which is to provide a distributed Bragg grating which can have a feedback force suitable for such thicknesses of the first dielectric layer. The third waveguide section may extend longitudinally along an optical propagation axis of the optical device, the structuring of the third section consisting of an alternation between a cross section of a first width and a cross section d 'a second width different from the first width. The second width can be zero. The gain structure may extend longitudinally along an optical propagation axis of the optical device, and each of the first and second ends of the gain structure may have, over at least part of its thickness and in a longitudinal direction going away from the central portion, a cross section of decreasing width. Such a variation in cross-section at the two ends, and over part of the thickness, of the gain structure is particularly suitable for a thickness of silicon layer 201 of less than 700 nm, or less than 500 nm, and which may be equal to 400 nm, even 300 nm. The gain structure may extend longitudinally along an optical propagation axis of the optical device and comprise a first semiconductor zone, a second semiconductor zone and the gain medium, and, for each of the first and second ends of the structure gain, the first semiconductor zone, the second semiconductor zone and the gain medium may have, over their respective lengths, a cross section of constant width. Such a constant cross section of the first semiconductor zone, of the second semiconductor zone and of the gain medium makes it possible to provide transition zones which are particularly suitable for a thickness of silicon layer 201 greater than 500 nm, and for example equal to 700 nm. The waveguide can accommodate at least one optical and / or electronic component, the optical component preferably being chosen from the group comprising PN junction silicon optical modulators, lll-V semiconductor hybrid modulators on silicon, surface coupling networks. , fiber couplers by the device edge, optical filters, wavelength multiplexers and demultiplexers, and photodetectors which include germanium silicon photodetectors and lll-V semiconductor photodetectors, and electronic components preferably being a transistor. The component accommodated by the waveguide can be an IL-V semiconductor hybrid modulator on silicon, said modulator being a capacitive modulator. The invention also relates to a method of manufacturing a photonic device comprising at least one silicon waveguide and a laser comprising a gain medium capable of emitting light, the method comprising the following steps: providing a substrate associated with at least one silicon layer on a first dielectric layer, forming, at least partially in the silicon layer, a first waveguide and the first to fifth waveguide sections distinct from the first waveguide, the first to the fifth succeeding waveguide section connected optically in pairs, and being optically connected to the first waveguide by at least one of the first and the fifth section of waveguide, the third section comprising a structuring arranged only over a first part of its thickness, said structuring forming a Bragg grating, burial of the waveguide and of the first to fifth sections of waveguide by at least a dielectric filler material and planarization of said dielectric filler material to form an optical guide stage comprising the waveguide and the first to fifth sec waveguide tion and an intermediate layer in contact with said optical guide stage, the third section being in contact with the intermediate layer, the second and fourth waveguide section being in contact with the intermediate layer on a part of the intermediate layer which consists only of dielectric materials, a substrate / first dielectric layer / optical guide stage / intermediate layer being thus formed, supply of a support, assembly of the substrate / first dielectric layer / stage optical guidance / intermediate layer on the support, the assembly being carried out by bonding of the intermediate layer on the support, removal of the substrate, formation of a gain structure comprising at least the gain medium, the gain structure being formed by contact with the first dielectric layer by presenting a central portion of the gain structure opposite the third section and a first and a second end opposite the second and the fourth section, thus, the central portion of the gain structure forms with the third waveguide section a laser hybrid waveguide, the second and fourth waveguide sections, and the first and second ends of the gain structure forming first and second optical transition zones of an optical mode between the laser hybrid waveguide and the first and fifth sections respectively waveguide, the photonic device thus being formed, during said formation of the structure, the first part of the thickness of the third section on which the structuring is arranged being separated from the first dielectric layer by at least a second part of the thickness of the third section. Such a method allows the manufacture of a photonic device according to the invention and to benefit from the advantages which are linked to it. The step of forming, at least partially in the silicon layer, the first waveguide and the first to fifth waveguide sections distinct from the first waveguide can comprise the following substeps: structuring of the silicon layer to form a second thickness part of the waveguide and of the first to fifth waveguide sections, formation from a layer of silicon complementary to a first thickness part of the guide and first to fifth waveguide sections. There may also be provided a step of thinning the first dielectric layer between the steps of removing the substrate and forming the gain structure. Such thinning makes it possible to obtain a first dielectric layer having a thickness adapted to benefit as well as possible from the advantages of the invention. After the step of thinning the first dielectric layer, the first dielectric layer may have a thickness less than or equal to 110 nm, the thickness of the first dielectric layer preferably being less than or equal to 90 nm, or even to 70 nm, even at 20 nm. During the step of forming the gain structure, the gain structure can extend longitudinally along an optical propagation axis of the optical device and the first and second ends of the gain structure can have, on at least one part of their thickness and in a longitudinal direction moving away from the central portion, a cross section of decreasing width. Such a step of forming the gain structure allows the provision of a gain structure particularly suitable for a silicon layer thickness of less than 700 nm, or less than 500 nm, and which may be equal to 400 nm, or even 300 nm. During the step of forming the gain structure, the gain structure can extend longitudinally along an optical propagation axis of the optical device and can comprise a first semiconductor zone, a second semiconductor zone, and the gain medium, and, for each of the first and second ends of the gain structure, the first semiconductor zone, the second semiconductor zone and the gain medium may have, over their respective lengths, a cross section of constant width. Such a step of forming the gain structure allows the provision of a gain structure particularly suitable for a silicon layer thickness greater than 500 nm, and for example equal to 700 nm. BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments, given for purely indicative and in no way limiting, with reference to the appended drawings in which: FIG. 1 illustrates a photonic device of the prior art extracted from the work of S. Keyvaninia et al. published in the scientific journal “Optics Letters” in 2013, Figure 2 is a graph also extracted from the work of S. Keyvaninia etal, and representing the variation of the feedback force of a Bragg grating as a function of the thickness of an intermediate layer between the Bragg grating and a gain structure this for different thicknesses of structuring of the Bragg grating, FIGS. 3A to 3D respectively illustrate a top view, a view in longitudinal section, a view in transverse section along a plane Υ1ΥΓ and a cross-sectional view along a plane Y2Y2 'of a photonic device according to a first embodiment of the invention, the section planes Y1Y1' and Y2Y2 'being shown in FIG. 3A FIGS. 4A to 4D illustrate, for FIGS. 4A and 4B, cross-sectional views of a laser hybrid waveguide of the photonic device illustrated in FIGS. 3A to 3D and a salt photonic device respectively in the prior art, the thickness of a silicon layer being identical for these two optical devices, and FIGS. 4C and 4D graphically representing the variation of the kappa value of a Bragg grating of the optical device of the respectively FIG. 4C and that of FIG. 4D, as a function of the widths of wide edges and narrow edges, FIGS. 5A to 5F illustrate, in views in longitudinal sections, the main stages in the manufacture of a photonic device as illustrated in Figures 3A to 3F, Figure 6A to 6D respectively illustrate a top view, a longitudinal view, a cross-sectional view along a plane Υ1Υ and a cross-sectional view along a plane Y2Y2 'of the intermediate device shown in the figure 4B, the section planes Υ1ΥΓ and Y2Y2 'being shown in FIG. 6A, FIGS. 7A and 7B respectively illustrate a top view and a view in longitudinal section of a device according to a second mode d e embodiment in which a gain structure of the photonic device has a first and a second end comprising a constant cross section, FIGS. 8A to 8B respectively illustrate a top view, a view in longitudinal section, a view in cross section along a plane Υ1ΥΓ and a cross-sectional view along a plane Y2Y2 'of a photonic device according to a third embodiment in which a structuring of a third waveguide section has on a first thickness an alternation between a cross section of a first width and a cross section of a second width of zero value, the section planes Y1Y1 and Y2Y2 'being shown in FIG. 7A, FIGS. 9A to 9E illustrate, in longitudinal section views, the main stages of manufacturing d 'a photonic device as illustrated in Figures 7A to 7D, Figures 10A and 10B respectively illustrate a drawing view us and a longitudinal section view of a device according to a fourth embodiment in which a gain structure of the photonic device has a first and a second end comprising a constant cross section and the third waveguide section is similar to that of the device according to FIGS. 7A to 7D, FIGS. 11A to 11D respectively illustrate a view in longitudinal section, a first, second and third view in transverse section along cutting planes Y1YT, Y4Y4 'and Y5Y5' of a photonic device according to a fifth embodiment of the invention comprising a capacitive modulator, the section planes Υ1ΥΓ, Y4Y4 'and Y5Y5' being shown in FIG. 11A, FIGS. 12A to 12C respectively illustrate a top view, a view in longitudinal section and a cross-sectional view along a plane Y6Y6 ′ of a device according to a sixth embodiment in which the gain structure is of the type lateral, the section plane Y6Y6 'being shown in FIG. 12A, FIG. 13 illustrates a cross-sectional view at the level of a third waveguide section of a photonic device according to a fifth embodiment in which the 'optical guide stage comprises a third thickness part of a third waveguide section. Identical, similar or equivalent parts of the different figures have the same reference numerals so as to facilitate the passage from one figure to another. This is also valid for the prior art illustrated by FIG. 1 which shares, for the similar parts, apart from the differences linked to the invention, the same referencing. The different parts shown in the figures are not shown on a uniform scale, to make the figures more readable. The different possibilities (variants and embodiments) must be understood as not being mutually exclusive and can be combined with one another. Above and in the rest of this document is meant by "transverse section" and by "longitudinal section" respectively a section along a plane perpendicular to the direction of propagation of the guided optical field and a section along a plane parallel to the direction of propagation of the guided optical field perpendicular to the surface of the substrate. DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS FIGS. 3A to 3D respectively represent schematic views from above, in longitudinal section along the plane XX ', and in transverse section along the planes Υ1ΥΓ and Y2Y2' of a photonic device 1 according to a first embodiment of the invention comprising a first silicon waveguide 210 and a laser 300 comprising a gain medium 321 capable of emitting light, the laser 300 being optically connected to the first waveguide 210. The photonic device 1 more specifically comprises: a support 120 comprising a second dielectric layer 130, an intermediate layer 420 in contact with the support 120 by the second dielectric layer 130, the intermediate layer 420 consisting of a dielectric material, an optical guide stage in contact with the intermediate layer opposite the support 120, the optical guide stage 200 comprising a part of a first waveguide 210, a first to a fifth waveguide section 211, 212, 213, 214, 215 distinct from the first waveguide 210, the first to fifth sections 211, 212, 213, 214, 215 of successive waveguides being optically connected in pairs, and being connected to the first waveguide 210 by at least one of the first and fifth waveguide sections 211, 215, the optical guide stage 200 further comprising a dielectric filler material 205, a first layer of dielectric material 110 covering the stage e optical guide 200 on its first face 200A, a gain structure 310 comprising at least one gain medium 321 capable of emitting light, the gain structure 310 having a central portion opposite the third waveguide section 213 and a first and a second end in look of the second and fourth waveguide section 212, 214, thus, the central portion of the gain structure 310 forms with the third waveguide section 213 a hybrid laser waveguide 313, the second and fourth waveguide section 212, 214 and the first and second ends of the gain structure 310 forming first and second optical transition zones 312, 314 of an optical mode between the laser hybrid waveguide 313 and respectively the first and fifth waveguide sections 211, 215, a first and a second electrical contact 531, 532, not shown in FIGS. 3A to 3D and which are shown in FIG. 11B, for electrically contacting the gain structure 310, and an encapsulation layer 510, not illustrated in FIGS. 3A to 3D and which is shown in FIG. 11B, encapsulating the gain structure 321 and the first and second electrical contacts 531, 532. The third waveguide section 213 comprises a structuring arranged only over a first part el of its thickness, said structuring forming a Bragg grating 223 distributed under the gain structure to form a feedback structure and a resonant cavity comprising at at least a part of the gain medium 321 this so as to form a laser 300 optically connected to the first waveguide 210 by at least one of the first and the fifth waveguide section 211, 215. The first part el of the thickness of the third waveguide section 213 on which the structuring is arranged is located at a distance from the first dielectric layer 110 and therefore from the gain structure 310. Such an arrangement at a distance from the first part el of the thickness of the third waveguide section 213 is supplied by means of a second part e2 of the thickness of the third waveguide section 213 arranged e ntre the first part e1 of the thickness of the third waveguide section 213 and the first dielectric layer 110. In other words, the second part e2 of thickness of the third waveguide section 213 is interposed between the first thickness of the third section of the waveguide section 213 and the first dielectric layer 110. It will be noted that, for simplification and as indicated below, FIGS. 3A and 3B do not illustrate a quarter-wave defect in the distributed Bragg grating 223, or a total reflector on one side of the laser; both of which are each known to those skilled in the art for ensuring the emission of the DFB type laser according to a single mode of the cavity. It will also be noted that to facilitate reading, FIG. 3A has been shown diagrammatically so as to include only certain components of the photonic device. Thus, for example, the electrical contact 531 and the encapsulation layer 510, which are present in particular on 11A to 11D, have not been shown in FIGS. 3A to 3D. For the same purpose, such a diagram is also used for all of the top views and sectional views of this document except for FIGS. 11A to 12C. Thus the electrical contact points and the encapsulation in the material 510 are only shown in FIGS. 11A to 12C. The support 120 is a support compatible with the constraints of microelectronics and optoelectronics and can be a support made of semiconductor material or dielectric material. In a particular application of the invention, the support can be a crystalline silicon support. According to this possibility and according to a variant not illustrated in FIGS. 3A and 3B, the support can also integrate electronic control and / or reading components complementary to the optical components, such as the laser 300 and active components accommodated in the first guide d wave 210, and electrical interconnections connecting said electronic components to said optical components via vias and metallic lines housed in the dielectric filling material 205 and the intermediate layer 420. In the same way and according to a variant of this first mode of embodiment, the support 120 may also include via electrical through conductors participating in the formation of the electrical contacts 531, 532, 533, 534 allowing an electrical connection of these same optical components to a second substrate, the second so-called control substrate, integrating said electronic control and / or readout components re complementary to optical components. As illustrated in FIG. 3B, the support 120 comprises a second dielectric layer 130. The second dielectric layer 130 is preferably adapted to allow assembly by bonding by molecular adhesion of the intermediate layer 420 on the support 120. Thus, the second dielectric layer 130 has for this purpose a second planar bonding surface. In the particular application of the invention, the second dielectric layer 130 is made of silicon dioxide SiO 2 . The intermediate layer 420 has a first face, preferably forming a first planar bonding surface, by which it is in contact with the second dielectric layer 130, and a second face opposite the first face. The intermediate layer 420 comprises a dielectric material such that the second and fourth waveguide sections 212, 214 are in contact with the intermediate layer 420 on a portion of the intermediate layer 420 which is made only of dielectric materials. The intermediate layer is also in contact with the third waveguide section 213. It will be noted that with such a configuration according to the invention, the intermediate layer 420 does not comprise, opposite each of the second and the fourth waveguide section 212, 214, any excess thickness of any type and that the third waveguide section 213 is not facing any space delimited by such extra thicknesses. The dielectric material of the dielectric layer is preferably silicon dioxide SiO 2 . According to one possibility of the invention, not illustrated in FIGS. 3A to 3B, the intermediate layer can comprise several dielectric materials in the form of several sublayers. The intermediate layer 420 is in contact by its second face with the optical guide stage 200. The optical guide stage 200 comprises a first face 200A by which it is in contact with the intermediate layer 420 and a second face 200B opposite to its first face 200A. In this first embodiment, the optical guide stage 200 is formed from a silicon layer 201, illustrated in FIG. 5A coming from a substrate of the silicon layer type on a dielectric layer 110. This type of substrate is better known under the English name of "silicon on insulator" and the associated acronym SOI which means "silicon on insulator". In a particular configuration of the invention, the silicon layer 201 is a surface silicon layer derived from a silicon on insulator substrate, known by the acronym 'SOI' for Silicon on Insulator. Such a layer of silicon 201 coming from a substrate of the SOI substrate type offers, among other advantages, having a good crystalline quality and a controlled thickness, making it possible to provide a first waveguide 210 and waveguide sections 211, 212, 213, 214, 215 having low optical losses. In a particular configuration of the invention The dielectric layer layer 110 is made of silicon dioxide SiO2, and is known under the English name “Buried oxide” and the acronym BOX for buried oxide. The use of such an SOI substrate also has the advantage of authorizing the supply of a first dielectric layer 110 of thickness and flatness controlled by means of the BOX layer. As a variant of this configuration using a single layer of silicon 201 formed by a surface silicon layer of an SOI substrate on and a dielectric layer 110 obtained from the BOX of the same SOI substrate, it is also possible to use a first layer of silicon, from an SOI substrate on a dielectric layer 110, in association with a second layer of silicon in direct contact with said first layer of silicon, or in contact with said first layer of silicon by means of an intermediate layer of dielectric material . This second layer of silicon can either be deposited by a deposition process, or be a layer transferred by molecular bonding. In the particular application of the invention, the silicon layer 201 has a thickness of 300 nm or 500 nm. The first waveguide 210 and the first to fifth waveguide sections 211, 212, 213, 214, 215 are obtained, in this first embodiment, by etching the silicon layer 201. Of course, as illustrated following this document, in particular in connection with FIGS. 11A to 11D, the first waveguide 210 can also accommodate other components, whether optical, such as a modulator optics and a surface coupling network, not illustrated in FIGS. 3A and 3B, and / or electronic, in accordance with the teaching of Jason S. Orcutt and his co-authors in the article 'Open foundry platform for high-performance electronic-photonic integration 'published in 2012 in the scientific journal "Optics express", volume 20, number 11 page 12222-12232. As regards the optical component (s), these can be active components, such as modulators, photodetectors and phase shifters, or passive components such as wavelength multiplexers, area coupling networks and couplers by the edge of the chip. To this end, to allow electrical connection of the active optical components and / or any electronic components, the photonic device 1 can also comprise metallic vias housed in the dielectric material 205 and the intermediate layer 420 and / or in a layer d encapsulation of the gain structure 310 and, in the first dielectric layer. Such metallic vias are described further in the remainder of this document in relation to FIGS. 11A to 11D. In the practical application of the invention, As illustrated in FIGS. 3C and 3D representing sectional views of the third waveguide section 213 along the section planes Υ1ΥΓ and Y2Y2 ', each of the first waveguide 210 and from the first to the fifth waveguide 211, 212, 213, 214, 215 comprises, on a second part e2 of their thickness comprising the second face 200B of the optical guide stage 200, a base and, on a first part el of the thickness, comprising the first face 200A of the optical guide stage 200, a portion, called edge, having a reduced cross-section with respect to the base. Of course, such a form of the first waveguide 210 and of the waveguide sections 211, 212, 213, 214, 215 is purely illustrative of the practical application of the invention and other forms can be envisaged without that we go beyond the scope of the invention. Thus, for example, the first waveguide 210 may also have a constant cross section. It will also be noted that, according to the variant in which the optical guide stage 200 is obtained by means of a first layer of silicon originating from a substrate of the silicon layer type on a dielectric layer 110 in association with a second layer of silicon in contact with said first layer of silicon, it is conceivable that the base is provided by the first layer of silicon 201 and that the edge is provided by the second layer of silicon. According to this possibility, the edge can be provided: - either by etching of said second silicon layer, - Or by deposition of the second layer of silicon on said first layer of silicon in the form of edges in contact with the base previously etched in the first layer of silicon. The waveguide 210 is optically connected to the first waveguide section 211. As illustrated in FIGS. 3A and 3B, in this first embodiment of the invention, the first waveguide 210, like the first to fifth waveguide section 211, 212, 213, 214, 215, are formed in the silicon layer 201 in the entire thickness thereof. Of course, as a variant, one or more of the first waveguide 210 and the first to the fifth waveguide section 211, 212, 213, 214, 215 can be formed in part of the thickness. of the silicon layer 201, and thus have different thicknesses. The first to fifth waveguide sections 211, 212, 213, 214, 215 follow one another, the first waveguide section 211 is therefore optically connected to the second waveguide section 212 being itself connected optically to the third waveguide section 213, and so on. In this way, the first to fifth waveguide sections 211, 212, 213, 214, 215 are optically connected to the first waveguide 210 through the first waveguide section 211. As illustrated diagrammatically in FIG. 3A, the second and the fourth waveguide section 212, 214 each have, in a direction going from the interior of the gain structure 310 towards the exterior of the gain structure 310 , and in a first part el of their thickness: - over a first part of its length, an increasing cross section, - over a second part of its length, a constant cross section, this second part being optional. The first and fifth waveguide sections 211, 215 each have a direction from the inside of the gain structure 310 towards the outside of the gain structure 310, and in a first part el of their thickness a cross section whose width is decreasing. The term “cross section of a waveguide” is understood above and in the rest of this document to mean the section of the waveguide in a plane perpendicular to the direction of propagation of the light in the guide, and perpendicular to the support. 120. According to one possibility of the particular application of the invention shown in FIG. 3A, each of the first to the fifth waveguide sections 211, 212, 213, 214, 215, in the same way as the first guide wave 210, have a cross section of constant width forming a base in a second part e2 of their thickness comprising the second face 200B of the optical guide stage 200. Of course, other configurations of the first, second, fourth, and fifth waveguide sections 211, 212, 214, 215 can also be envisaged without departing from the scope of the invention. The third waveguide section 213 includes the optical feedback structure in the form of a Bragg grating 223 distributed under the central part of the gain structure 310. More precisely, as illustrated in the top view of the figure 3A, the optical feedback structure is a Bragg grating 223 distributed with "lateral corrugations", that is to say that the variation in optical index of the Bragg grating is provided by a variation in the transverse width of the guide wave. Thus, according to this possibility, the third waveguide section 213 extends longitudinally along an optical propagation axis of the optical device 1 and the structuring of the third waveguide section 213 consists of an alternation between a cross-sectional portion of a first width WL, called wide edge and a cross-sectional portion of a second width WN, called narrow edge, the values WN and WL respecting the following inequalities: 0 <WN <WL. With such a feedback structure, the laser is, in accordance with the invention, a laser of the distributed feedback laser type also known under the English name “Distributed FeedBack laser” and the corresponding acronym DFB laser. In the Bragg 223 network distributed according to the invention, the period of repetition of the portions of edges of the same width (wide or narrow edges), in accordance with the principle of a Bragg network, is substantially λ / 2n e ff, λ being the emission wavelength of the laser 300 and n e ff the average effective index of the mode guided by the hybrid waveguide 313. With such a configuration, the distributed Bragg grating 223 is a grating of Bragg with "lateral corrugations" partially etched in the thickness of the third waveguide section 213. In the practical application of the invention and as illustrated in the sectional views along planes Y1Y1 'and Y2Y2' shown in Figures 3C and 3D, the variation in transverse width for the distributed Bragg network 223 is carried out on a first part el of the thickness of the third waveguide section 213 which is at a distance from the first dielectric layer. According to the configuration described, the third waveguide section 213 comprises, in the same way as the first, second, fourth and fifth waveguide sections 211, 212, 214, 215, a base on a second part e2 of its thickness. The base has a constant transverse width and a thickness e2, for example equal to 150 nm. In other words, the third waveguide section 213 has, on the first part el of its thickness, that corresponding to the edge, which is the furthest from the gain structure 310, an alternation between a cross section of a first width WL and a cross section of a second width WN. It will be noted that according to the invention, the thickness value of the base e2 can be adjusted to modify the feedback force of the distributed Bragg network 223, as is already the case in the state structures of art. According to an advantageous possibility of the invention not illustrated in FIGS. 3A to 3D, the distributed Bragg grating may include a phase fault of the quarter wave type in order to optimize the selectivity of the resonant cavity. As a variant of this possibility and in order to optimize the selectivity of the resonant cavity, the first or the fifth waveguide section 211, 215 can accommodate a substantially total reflector, the total reflector being able to be selected from the Sagnac type reflectors , distributed Bragg gratings, facet type mirrors with high reflectivity treatment. For the same purpose and as a variant, it is also possible that one of the second waveguide section 212 and the fourth waveguide section 214 accommodates a substantially total reflector, the total reflector being able to be selected from among the distributed Bragg grating type reflectors, facet type mirrors with high reflectivity treatment. A dielectric filler material 205 fills the parts of the silicon layer 201 hollowed out during the formation of the first waveguide and the first to fifth waveguide sections, this dielectric filler material can be, for example, identical to that of the intermediate layer 420. The optical guide stage has its second face 200B in contact with a first face of the first dielectric layer 110. The first dielectric layer 110 comprises, in addition to its first face, a second face, opposite the first face, by which it is in contact with the gain structure 310 The first dielectric layer 110 is a dielectric layer originating from a substrate of the silicon on insulator or SOI type, the latter being provided by the insulator on which the silicon layer 201 is disposed. According to the practical application of the invention the first dielectric layer 110 is a layer of silicon dioxide SiO 2 whose thickness is less than 100 nm. The thickness of the first dielectric layer 110 is thus preferably less than or equal to 90 nm, or even 70 nm. For example, the first dielectric layer may have a thickness of 15 or 50 nm. According to an optional possibility of the practical application of the invention corresponding to this first embodiment, the first dielectric layer 110 may be an insulating layer of a substrate of the silicon on insulator type whose thickness has been partially thinned . As a variant to this first embodiment, the first dielectric layer 110 may be a layer of dielectric material deposited or transferred in contact on the silicon layer 201, the insulating layer of a substrate of the silicon on insulator type originally of the silicon layer 201 having been completely etched. According to another variant of the invention not shown, the first dielectric layer 110 may include a first sublayer corresponding to an insulating layer of a substrate of the silicon on insulator type at the origin of the silicon layer 201 , this first layer having preferably been thinned and a second sublayer deposited or transferred onto the first sublayer. This second sublayer may be made of the same dielectric material as the first sublayer of the first dielectric layer 110 or of another dielectric material. The first dielectric layer 110 is in contact with the gain structure 310 by its second face. As illustrated in FIG. 3B, the gain structure 310 comprises: a first semiconductor zone 341 of a first type of conductivity formed in a first semiconductor layer 340, the gain medium 321 formed in a second semiconductor layer 320, a third semiconductor zone 331 of a second type of conductivity opposite to the first type of conductivity and formed in a third semiconductor layer 330. According to a usual configuration of the invention, the first, third and second semiconductor layer 340, 330, 320 and therefore the first and third semiconductor zones 341, 331 and the gain medium 321, are all three made of semiconductor materials with direct gap such as III-V semiconductors. Thus, the first, and the third semiconductor layer 340, 330 are preferably produced in III-V semiconductors, such as indium phosphide InP or gallium arsenide GaAs, while the second semiconductor layer 320 is preferably formed by a stack of binary, ternary quaternary compounds of III-V semiconductor materials. The first and second type of conductivity are chosen from the type of conductivity in which the majority carriers are electrons, that is to say that provided by a so-called N doping, and the type of conductivity in which the majority carriers are holes, that is to say that provided by a so-called P doping FIGS. 3B, 3C and 3D thus illustrate more precisely the arrangement of the first and third semiconductor zones 341, 331 and of the gain medium 321 in order to form the gain structure 310. The first semiconductor zone 341 has a first face in contact with the first dielectric layer 110 and a second face opposite to the first face by which it is in contact with the gain medium 321. The gain medium 321 has a first face by which it is in contact with the first semiconductor zone 341 and a second face opposite to the first face by which it is in contact with the third semiconductor zone 331. The first semiconductor zone 341 has a width greater than that of the gain medium 321 and of the third semiconductor zone 331 in order to authorize a contact by means of the second electrical contact, not illustrated in FIGS. 3A to 3D. The gain medium 321 and the third semiconductor zone 331 have an identical width. The first semiconductor zone has on its second face a part in contact with a first electrical contact not shown. The gain structure 310 is arranged, as illustrated in FIG. 3B, in contact with the second face of the first dielectric layer 110 so that the gain structure 310 has a central portion facing the third guide section. wave 213. With such a configuration: the central portion of the gain structure 310 forms with the third waveguide section 213 a laser hybrid waveguide, the second waveguide section 212 and the first end of the gain structure 310 form a first optical transition zone 312 of the optical mode between the optical hybrid waveguide 313 and the first waveguide section 211, the fourth waveguide section 214 and the second end of the gain structure 310 form a second optical transition zone 314 of the optical mode between the optical hybrid waveguide 313 and the fifth waveguide section 215. Thus, the gain structure 310 is, with the exception of its first and second ends, opposite the third waveguide section 213. With such an arrangement, the gain medium 321 is optically coupled with the structure of against optical reaction making it possible to form a resonant cavity comprising the gain medium 321. In this first embodiment, as illustrated in FIG. 3A, each of the first and the second end of the gain structure 310 has, over part of its thickness and in a longitudinal direction going away from the central portion , a cross section whose width decreases. More specifically, each of the gain medium 321 and of the third semiconductor zone 331 has, at the first and second ends of the gain structure, a cross section whose width is decreasing in a longitudinal direction going away of the central portion. In other words, each of the gain medium 321 and of the third semiconductor zone 331 has a first and a second tapered end. The first semiconductor zone 341 has, in turn, a constant cross section over its entire length. Such a variation in cross-section at the two ends, and over part of the thickness, of the gain structure 310 is particularly suitable for a thickness of silicon layer 201 of less than 700 nm, or less than 500 nm, and which may be equal at 400 nm, even 300 nm. Such a photonic device 1 is particularly advantageous with respect to the prior art, in particular as regards the possibility of obtaining kappa values of the feedback force of the Bragg grating 223 compatible with a small thickness of the first layer. dielectric 110. In order to illustrate such an advantage, FIGS. 4A and 4B show a cross-sectional view of the laser hybrid waveguide 313 of a photonic device 1 according to the first embodiment of the invention, respectively, which therefore conforms to the invention, and according to the prior art. The common configuration of these two photonic devices 1 is as follows: a layer of silicon 201 of thickness equal to 300 nm, a first dielectric layer 110, of silicon dioxide SiO 2 , of thickness equal to 20 nm, a first thickness ei, ef, that is to say l 'stop of the third waveguide section 213, equal to 150 nm, a second thickness e 2 , e 2 ', that is to say of the base of the third waveguide section 213, equal to 150 nm. Thus, the photonic device 1 according to the first embodiment illustrated in FIG. 4A and the photonic device 1 according to the prior art illustrated in FIG. 4B are distinguished only by the arrangement of the base, the latter being in contact with the first dielectric layer 110 for the photonic device 1 according to the invention and in contact with the intermediate layer 420 for the photonic device 1 according to the prior art. The inventors calculated the variation of the feedback force for the Bragg grating of the photonic device 1 according to the invention according to FIG. 4A and for the photonic device 1 according to the prior art according to FIG. 4B, this as a function of the first width WL and the second width WN. FIGS. 4C and 4D illustrate the results of these calculations for the photonic device 1 illustrated in FIG. 4A and the photonic device 1 illustrated in FIG. 4B respectively, with the first width WL on the abscissa and the second width WN on the ordinate, the value kappa feedback force being shown as isovalue contours in the graphs in Figure 4C and 4D. It can thus be observed in FIGS. 4D and 4C that, for a first width WL of 1.5 μm, suitable for a silicon layer 201 of 300 nm, the value of the feedback force varies between 0 to a value very much exceeding 100 cm 1 for the photonic device of the prior art whereas the photonic device according to the invention makes it possible to obtain a reduced reaction force not exceeding 100 cm 1 . Thus, as these values show, the invention makes it possible to obtain a satisfactory feedback force for the formation of lasers with a length of central active area greater than or equal to 50 μm. FIGS. 5A to 5E illustrate the main steps in manufacturing a method for manufacturing a photonic device 1 according to the invention. Such a manufacturing process, in the same way as all of the processes described in this document, is particularly suitable for implementing its manufacturing steps in parallel to allow the simultaneous formation of a plurality of photonic devices 1 on the same support 120. With such a parallel implementation, such a method of manufacturing photonic devices is said to be collective. Such a manufacturing process includes the following steps: supply of a substrate 100 associated with at least a first layer of silicon 201 a first dielectric layer 110, as illustrated in FIG. 5A, structuring of the layer of silicon 201 to form the first waveguide 210 and the first to fifth waveguide sections 211, 212, 213, 214, 215 distinct from the first waveguide 210, the first to fifth waveguide sections 211, 212, 213, 214, 215 succeeding each other and being optically connected two by two, and being optically connected to the first waveguide 210 by at least one of the first and fifth waveguide sections 211, 215, the third section 213 comprising a structure arranged only on a first part and of its thickness, said structuring forming a distributed Bragg grating 223, as shown in FIG. 4B and FIGS. 6A to 6D, burial of the first waveguide 210 and of the first to fifth waveguide sections 211, 2 12, 213, 214, 215 with at least one dielectric material 205 and planarization of said dielectric material in order to form an optical guide stage 200, comprising the first waveguide 210, the first to fifth waveguide sections 211, 212, 213, 214, 215 and the dielectric material 205, and an intermediate layer 420 in contact with said optical guide stage 200, the third waveguide section 213 being in contact with the intermediate layer 420, the second and fourth waveguide sections 212, 214 being in contact with the intermediate layer 420 on a part of the intermediate layer which consists only of dielectric materials, a substrate 100 / first dielectric layer 110 / optical guide stage 200 / intermediate layer 420 being thus formed, as illustrated in FIG. 5C, supply of a support 120 comprising a second dielectric layer 130, assembly of the substrate assembly 100 / p First dielectric layer 110 / optical guide stage 200 / intermediate layer 420 on the support 120, the assembly being carried out by molecular bonding of the intermediate layer on the support 120, as shown in FIG. 5D, removal of the substrate 100, formation of the first, second and third semiconductor layers 340, 320, 330, as illustrated in FIG. 5E, partial etching of the first, second and third semiconductor layers 340, 320, 330 so as to form the gain structure 310 comprising at least the medium to gain 321, the gain structure 310 being in contact with the first dielectric layer 110 by presenting a central portion of the gain structure 310 facing the third section 213 and a first and a second end facing the second and the fourth section 212, 214, thus, the central portion of the gain structure 310 forms with the third waveguide section 213 a guide of hybrid wave 313, the second and fourth waveguide sections 212, 214, and the first and second ends of the gain structure 310 forming first and second optical transition zones 312, 314 in an optical mode between the laser hybrid waveguide 313 and respectively the first and the fifth waveguide sections 211,215, the photonic device 1 thus being formed, during said formation of the structure, the first part el of the thickness of the third section on which the structure is arranged being located at a distance from the first dielectric layer 110, as illustrated in FIG. 5F. In the context of such a manufacturing process and according to a possibility not illustrated, it is also conceivable to provide a step of partial thinning of the first dielectric layer 110. Such a step of thinning of the first dielectric layer 110 can be either a chemical etching step, a dry etching step, or a chemical mechanical polishing step, or a combination of these steps, this in order to maintain optimal control of the thinning of the thickness of the first dielectric layer 110. In the context of such a manufacturing process and according to a possibility which is not illustrated, it is also conceivable to provide a step of partial or total removal of the first dielectric layer 110, by dry or chemical etching and a step of forming a first alternative dielectric layer 110 by deposition or transfer of a dielectric material in addition to or in replacement of the dielectric layer partially or totally thinned, followed by a possible planarization step of this first alternative dielectric layer 110. It will of course be noted that if in this first embodiment the first waveguide 210 and the first to fifth waveguide sections 211, 212, 213, 214, 215 are formed by etching the silicon layer 201, it is also conceivable, as a variant of this first embodiment, that only one part of the thickness of the first waveguide 210 and from the first to the third waveguide sections 211, 212, 213, 214, 215, for example the second thickness, is formed in the layer of silicon 201, the rest being provided by the deposition of a second layer of silicon not shown. According to this variant, the structuring of the silicon layer 201 may be before or after the deposition of the second semiconductor layer 320, the latter being then able to be structured either directly at deposition, by deposition through a hard mask, or by etching after filing. According to this variant, instead of the step of structuring the silicon layer 201 to form the first waveguide 210 and first to fifth distinct waveguide sections 211, 212, 213, 214, 215 the first waveguide 210 can be provided with the following steps: structuring of the silicon layer 201 to form a second part e2 of the thickness of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215 distinct from the first guide wave 210, formation in a layer of complementary silicon of a first part el of thickness of the first waveguide 210 and of the first to fifth sections of waveguide 211, 212, 213, 214, 215 distinct from the first guide wave 210. According to this variant of the invention, the step of forming in the silicon layer the first part and thickness of the first waveguide 210 and the first to fifth sections 211, 212, 213, 214, 215 can comprise the following sub-steps: burial of the second thickness part e2 of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215, by the dielectric filling material 205 and planarization of said dielectric material 205 , formation of the complementary silicon layer in contact with the second part e2 of thickness of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215, structuring of the layer of complementary silicon to form the first thickness part e1 of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215. It will be noted that the sub-step for forming the complementary silicon layer can be both a sub-step for depositing said complementary silicon layer and a sub-step for transferring such a complementary silicon layer. FIGS. 6A to 6D illustrate, respectively by a top view, a view in longitudinal section along the plane XX ', and two cross-sectional views along the planes Υ1ΥΓ and Y2Y2' and more precisely, the structuring step of the silicon layer 201 to form the first waveguide 210 and the first to fifth waveguide sections 211, 212, 213, 214, 215. We can thus see in FIG. 6A the lateral corrugations of the third waveguide section 213 formed on a first thickness el of the third waveguide section 213, these corrugations being formed in contact with the second part e2 of the third waveguide section 213, as clearly shown in Figures 6C and 6D. FIGS. 7A and 7B illustrate a photonic device 1 according to a second embodiment in which the first semiconductor zone 331, the second semiconductor zone 341 and the gain medium 321 each have, over its respective length, a constant cross section over the entire length of the gain structure 310. Such a photonic device 1 differs from a photonic device according to the first embodiment by the shape of the gain structure 310. Such a constant cross section makes it possible to provide transition zones which are particularly suitable for a silicon layer thickness 201 greater than 500 nm, and for example equal to 700 nm. It will be noted that the method of manufacturing a photonic device 1 according to this second embodiment of the invention differs from a photonic device 1 according to the first embodiment in that during the partial etching step of the first, second and third semiconductor layers 340, 320, 320, the gain structure 310 extends longitudinally along an optical propagation axis of the optical device 1 and the first semiconductor zone 331, the second semiconductor zone 341 and the gain medium 321 present, on their respective length, a cross section of constant width. FIGS. 8A and 8B illustrate a top view and a longitudinal section view along the plane XX ′ of a photonic device according to a third embodiment in which the laser 300 comprises an optical feedback structure provided by a network of Distributed Bragg of the "vertical corrugations" type. Such a photonic device differs from a device according to the first embodiment by the type of structuring of the third waveguide section 213. Indeed, as shown in FIGS. 8A and 8B, in this third embodiment the second width WN of the structuring of the third waveguide section 213 is zero. Thus, a structuring is obtained in the third waveguide section 213 produced on the first part el of its thickness located at a distance from the first dielectric layer 110 and which may have, for example a thickness of 150 nm. This first part el of the thickness corresponds to the thickness of the cross section of the edge of the third waveguide section 213. The feedback structure has a thickness thus varying between a zero thickness, and a thickness el non-zero corresponding to that of the first part el of the third waveguide section 213 The alternation period between the zero thickness and the thickness of the first part el of thickness, according to the principle of Bragg grating, is substantially equal to λ / 2n e ff, λ being the emission wavelength of the laser 300. The second part e2 of thickness of the third waveguide section 213 has a constant thickness and forms the base of the third waveguide section 213. As shown in FIGS. 9A to 9E which illustrate by longitudinal sectional views (along the plane XX 'of FIG. 8A) the main steps of a method of manufacturing a photonic device 1 according to this third embodiment, a such a manufacturing process differs from the manufacturing process of a photonic device according to the first embodiment in that, as illustrated in FIG. 9B, during the step of structuring the silicon layer 201 to form the first guide wave 210 and the first to fifth waveguide sections 211, 212, 213, 214, 215, the structuring of the section of the third waveguide section is carried out in such a way that the second width WN is zero. It will thus be noted, as illustrated in FIG. 9A, that the step of supplying a substrate 100 is identical and that the steps which follow the step of structuring the silicon layer 201 to form the first waveguide 210 and first to fifth waveguide sections 211, 212, 213, 214, 215, have as their only difference, as illustrated in FIGS. 9C to 9E, the shape of the feedback structure which is a Bragg grating at vertical corrugations. Figures 10A and 10B respectively illustrate a top view and a longitudinal sectional view along the plane XX 'of a photonic device 1 according to a fourth embodiment of the invention in which the optical feedback structure is a network of Bragg 223 with vertical corrugations and in which the first semiconductor zone 331, the second semiconductor zone 341 and the gain medium 321 each have, over its respective length, a constant cross section over the entire length of the gain structure 310. A The photonic device 1 differs from a photonic device according to the third embodiment by the shape of the gain structure 310. It will be noted that the method of manufacturing a photonic device 1 according to this fourth embodiment of the invention differs from a photonic device 1 according to the third embodiment in that during the partial etching step of the first, second and third semiconductor layers 340, 320, 330, the gain structure 310 extends longitudinally along an optical propagation axis of the optical device 1 and the first semiconductor zone 331, the second semiconductor zone 341 and the gain medium 321 present, along their length respective, a cross section of constant width. FIGS. 11A to 11D illustrate, respectively by a longitudinal section view along the plane XX 'and three transverse section views along the planes Y1YT, Y4Y4', Y5Y5 ', a photonic device 1 according to a fifth embodiment in which it provides a hybrid optical modulator 230 of the capacitive type. A photonic device 1 according to this fifth embodiment differs from a photonic device 1 according to the third embodiment in that the first waveguide 210 accommodates an optical modulator 230 of the capacitive type and a partially etched coupling network 240 in the silicon layer 201. It will be noted that FIGS. 11A to 11D show the encapsulation layer 510 and the electrical contacts of the laser 300 and of the capacitive modulator 230. Thus, it can be seen in FIG. 11A, that the silicon layer 201 also comprises a doped silicon zone 232, in relation to a fourth semiconductor zone 231, and a coupling network 240 for extracting the radiation at the output of the photonic device 1 The coupling network is a network with two-dimensional structures in the silicon layer 201. The photonic device 1 also comprises the fourth semiconductor zone 231 which, formed in the first semiconductor layer 340 in which the first semiconductor zone 341 is also formed, is opposite the doped silicon zone 232. The fourth semiconductor zone 231 is in contact with the second face of the first dielectric layer 110. In this way, the fourth semiconductor zone 231, the doped silicon zone 232 and the part of the dielectric layer 110 which separates them together form the hybrid optical modulator 230 of the capacitive type. The method of manufacturing a photonic device 1 according to this fourth embodiment differs from a manufacturing method according to the second embodiment in that: during the structuring of the silicon layer 201, there is also formed the coupling network 240 accommodated in the first waveguide 210 and the part of the first waveguide 210 intended to form the doped silicon area 232 of the modulator capacitive 230, there is provided a step of localized doping of the silicon layer 201 in order to form the doped silicon zone 232 of a conductivity type opposite to the conductivity type of the fourth semiconductor zone 231, and during the formation of the gain structure 310, the fourth semiconductor zone 231 is also formed opposite the doped silicon zone 232 in order to form the capacitive modulator 230, and steps are provided for encapsulating the gain structure in one or more dielectric materials for forming the encapsulation layer 510 and for forming the metal contacts 531, 532, 533, 534. In FIG. 11C, the dielectric material 205 and parts made of dielectric materials of the intermediate layer 420 house a metallic via 235 electrically connecting 232 a metallic line 435 also housed in the dielectric material 205 and / or in intermediate layer 420. An electrical via 515, accommodated in the encapsulation layer 510, and passing through the first dielectric layer 110, is in electrical contact with the metal line 435, thus making it possible to supply the electrical contacts 534, 533 of the active components accommodated in the first waveguide 210, on the external face of the encapsulation layer. It can be seen in FIG. 11B that the first electrical contact 531 consists of a metal contact in contact with the surface of the first semiconductor zone 331 and adapted to form an ohmic contact therewith. The lateral metal contact of the first electrical contact 531 opens into a second face of the encapsulation layer 510 which is opposite to the first dielectric layer 110. The second electrical contact 532 comprises a metal contact for contacting the second semiconductor zone 341 and suitable for form ohmic contact with the latter. The second electrical contact 532 further comprises a metallic via in contact with the metallic contact and passing through the encapsulation layer 510 leading to the second face of the encapsulation layer 510. FIGS. 12A to 12C illustrate, respectively by a top view, a longitudinal section view along the plane XX 'and a transverse section view along the plane Y6Y6', a photonic device according to a sixth embodiment of the invention in which the gain structure 310 is of the "lateral junction" type. A device according to this sixth embodiment differs from a sound device 1 according to the third embodiment in that the gain structure 310 is a gain structure of the "lateral junction" type. The gain structure 310 comprises, as illustrated in FIG. 12C successively and in a cross section of the hybrid waveguide 313 along the axis Y6Y6 ': a first semiconductor zone 341 of a first type of conductivity, a gain medium 321 comprising, for example, at least one layer of quantum wells, or quantum dots, a third semiconductor zone 331 of a second type of conductivity opposite to first type of conductivity of semiconductor zone 341. The gain structure 310 further comprises, as illustrated in FIGS. 12A to 12C, a first and a second coupling zone 351, 352 arranged on either side of the first, second and third semiconductor zones 341, 331 in the direction of light propagation, and a semiconductor layer 353, also unintentionally doped, interposed between the first dielectric layer and the rest of the gain structure 310. The first and the second coupling region 351, 352 thus each correspond to one end of the gain structure 310 via which the first and second optical transition zones 312, 314 allow an adiabatic transmission of the optical mode between the laser hybrid waveguide 313 and respectively the first and the fifth section of waveguide 211, 215. The method of manufacturing a photonic device according to this sixth embodiment of the invention differs from the manufacturing method according to the first embodiment of the invention in that: in that during the step of forming the gain structure 310, the gain structure is a "side junction" structure. FIG. 13 illustrates a cross-sectional view of a photonic device 1 according to a sixth embodiment in which the first waveguide 210, and all of the first to fifth waveguide sections 211, 212, 213 , 214, 215, comprises a third part e3 of thickness. Such a photonic device 1 differs from a photonic device according to the first embodiment in that each of the first waveguide 210 and the first to fifth waveguide sections 211, 212, 213, 214, 215 comprises a third thick part in contact with the intermediate layer 420. Such a third thick part can, for example, allow the first waveguide to accommodate electronic components. In this sixth embodiment, the first part e1 of the thickness of the third waveguide section 213 is disposed between the second part e2 of the thickness of the third waveguide section 213, which is in contact with the first dielectric layer 110, and the third part of the thickness of the third waveguide section 213, which is in contact with the intermediate layer 420. It will be noted that this configuration of the third waveguide section 213 is also shared by the first waveguide 210 and by the first, second, fourth and fifth waveguide sections 211, 212, 214, 215 which has their respective edges arranged between the base and the third part e3 of their thickness. A method for forming a photonic device 1 according to this sixth embodiment differs from a manufacturing method according to the first embodiment in that, instead of the step of structuring the silicon layer 201 to form the first waveguide 210 and the first to fifth waveguide sections 211, 212, 213, 214, 215 distinct from the first waveguide 210, the following steps are provided: structuring of the silicon layer 201 to form a first and second part el, e2 of the thickness of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215 distinct from the first waveguide 210, formation of an additional silicon layer in contact with the first thickness part of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215, structuring of the additional silicon layer to form the third part e3 of thickness of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215. Of course, during the burial step of the first waveguide 210 and the first to fifth sections of the first waveguide 211, 212, 213, 214, 215, the third part of thickness e3 of the first guide wave 210 is buried in said dielectric filling material 205. In accordance with this sixth embodiment, the step of forming in the silicon layer the first part and thickness of the first waveguide 210 and the first to fifth sections 211, 212, 213, 214, 215 can understand the following sub-steps: burial of the second thickness part e2 of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215, by the dielectric filling material 205 and planarization of said dielectric material 205 , formation of the complementary silicon layer in contact with the second part e2 of thickness of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215, structuring of the layer of complementary silicon to form the first thickness part e1 of the first waveguide 210 and of the first to fifth waveguide sections 211, 212, 213, 214, 215. Said formation of the complementary silicon layer can be either a sub-step of depositing said complementary silicon layer or a transfer sub-step of such a complementary silicon layer. Of course, if a photonic device 1 according to this sixth embodiment has a configuration in accordance with the first embodiment except for the presence of the third part of thickness e3 of the first waveguide 210 and of the first to fifth guide sections d 211, 212, 213, 214, 215, such a configuration of a first waveguide 210 and from first to fifth waveguide sections 211, 212, 213, 214, 215 is also compatible with the devices photonics 10 1 according to the second to fifth embodiments.
权利要求:
Claims (16) [1" id="c-fr-0001] 1. Photonic device (1) comprising: a support (120), an intermediate layer (420) in contact with the support (120) comprising at least one dielectric material, a first waveguide (210), a first to a fifth waveguide section (211 , 212, 213, 214, 215) distinct from the first waveguide (210), the first to the fifth waveguide section succeeding each other by being optically connected in pairs, and being optically connected to the first waveguide wave (210) through at least one of the first and fifth waveguide sections (211, 215), a dielectric filler material (205), to form with the first waveguide (210) and the first to the fifth waveguide section (211, 212, 213, 214, 215) a waveguide stage (200) of the photonic device (1), the optical guide stage comprising a first face (200A) by which it is in contact with the intermediate layer (420) and a second face (200B) opposite the first face (200A), u ne first dielectric layer (110) comprising a dielectric material, the first dielectric layer (110) covering the optical guide stage on its second face (200B), a gain structure (310) in contact with the first dielectric layer (110 ) and comprising at least one gain medium (321) capable of emitting light, the gain structure (310) having a central portion opposite the third waveguide section (213) and a first and a second opposite end of the second and fourth waveguide sections (212, 214), thus, the central portion of the gain structure (310) forms with the third waveguide section (213) a waveguide laser hybrid (313), the second and fourth waveguide sections (212, 214) and the first and second ends of the gain structure (310) forming first and second optical transition zones (312, 314) an optical mode between the hybrid waveguide e laser (313) and respectively the first and fifth waveguide sections (211, 215), wherein the third section (213) is in contact with the intermediate layer (420) and comprises a structuring arranged only in a first part (el) of its thickness, said structuring forming a Bragg grating (223) distributed under the gain structure (310) to form a feedback structure and a resonant cavity comprising at least part of the gain medium (321 ) this so as to form a laser (300) optically connected to the waveguide (210) by at least one of the first and fifth waveguide sections (211, 215), in which the second and fourth waveguide sections (212, 214) are in contact with the intermediate layer (420) on a part of the intermediate layer (420) which consists only of dielectric materials, the photonic device being characterized in that the third s waveguide section (213) comprises at least a second part (e2) of its thickness which separates the first dielectric layer (110) and the first part (el) from the thickness of the third waveguide section (213). [2" id="c-fr-0002] 2. Photonic device (1) according to claim 1, in which the first part (el) of the thickness of the third waveguide section (213) is in contact with the intermediate layer (420). [3" id="c-fr-0003] 3. Photonic device (1) according to claim 1, in which the third waveguide section comprises at least a third part (e3) of its thickness, said third part (e3) of thickness being in contact with an intermediate layer. (420). [4" id="c-fr-0004] 4. Photonic device (1) according to any one of claims 1 to 3, in which the thickness of the first dielectric layer (110) is less than or equal to 100 nm, the thickness of the first dielectric layer (110) preferably being less than or equal to 90 nm, or even to 70 nm, even to 20 nm. [5" id="c-fr-0005] 5. Photonic device (1) according to any one of claims 1 to 4, in which the third waveguide section (213) extends longitudinally along an optical propagation axis of the optical device (1) and wherein the structuring of the third section (213) consists of an alternation between a cross section of a first width (WL) and a cross section of a second width (WN) different from the first width (WL). [6" id="c-fr-0006] 6. Photonic device (1) according to claim 5, in which the second width (WN) is of zero value. [7" id="c-fr-0007] 7. Photonic device (1) according to any one of claims 1 to 6, in which the gain structure (310) extends longitudinally along an optical propagation axis of the optical device (1), and in which each of the first and second ends of the gain structure (310) has, over at least part of its thickness and in a longitudinal direction moving away from the central portion, a cross section of decreasing width. [8" id="c-fr-0008] 8. Photonic device (1) according to any one of claims 1 to 6, in which the gain structure (310) extends longitudinally along an optical propagation axis of the optical device (1) and comprises a first semiconductor zone ( 331), a second semiconductor zone (341) and the gain medium (321), and in which, for each of the first and second ends of the gain structure (310), the first semiconductor zone (331), the second semiconductor zone (341) and the gain medium (321) has, over their respective lengths, a cross section of constant width. [9" id="c-fr-0009] 9. Photonic device (1) according to any one of claims 1 to 8, in which the waveguide (210) accommodates at least one optical and / or electronic component, in which the optical component is preferably chosen from the group comprising PN junction silicon optical modulators, lll-V semiconductor hybrid modulators on silicon, surface coupling networks, fiber couplers by the device edge, optical filters, wavelength multiplexers and demultiplexers , and the photodetectors which include the germanium photodetectors on silicon and the lll-V semiconductor photodetectors on silicon, and in which the electronic component is preferably a transistor. [10" id="c-fr-0010] 10. Photonic device (1) according to claim 9, in which the component accommodated by the waveguide is a hybrid semiconductor modulator ll-V on silicon, said modulator being a capacitive modulator [11" id="c-fr-0011] 11. Method for manufacturing a photonic device (1) comprising at least one silicon waveguide (210) and a laser (300) comprising a gain medium (321) capable of emitting light, the method comprising the following steps: providing a substrate (100) associated with at least one layer of silicon (201) on a first dielectric layer (110), forming, at least partially in the layer of silicon (201), a first guide wave (210) and first to fifth waveguide sections (211, 212, 213, 214, 215) distinct from the first waveguide (210), the first to fifth waveguide sections (211 , 212, 213, 214, 215) successively connected optically in pairs, and being optically connected to the first waveguide (210) by at least one of the first and fifth waveguide sections (211 , 215), the third section (213) comprising a structuring arranged only over a first part (el) of its thickness, said structuring forming a Bragg grating (223), burial of the waveguide (210) and first to fifth waveguide section (211, 212, 213, 214, 215) by at least one dielectric filler material (205) and pla narization of said dielectric filling material (205) in order to form an optical guide stage (200) comprising the waveguide (210) and the first to fifth waveguide sections (211, 212, 213, 214, 215 ) and an intermediate layer (420) in contact with said optical guide stage, the third section (213) being in contact with the intermediate layer (420), the second and fourth waveguide section (212, 214) being in contact with the intermediate layer (420) on a part of the intermediate layer which consists only of dielectric materials, a substrate (100) / first dielectric layer (110) / optical guide stage (200) / intermediate layer (420 ) being thus formed, supply of a support (120), assembly of the substrate (100) / first dielectric layer (110) / optical guide stage (200) / intermediate layer (420) on the support (120) , the assembly being carried out by gluing of the intermediate layer on the support (120), removal of the substrate (100), formation of a gain structure (310) comprising at least the gain medium (321), the gain structure (310) being formed in contact with the first dielectric layer (110) having a central portion of the gain structure (310) facing the third section (213) and a first and second end facing the second and fourth section (212, 213) thus, the central portion of the gain structure (310) forms with the third waveguide section (213) a hybrid laser waveguide (313), the second and fourth waveguide sections (212 , 214), and the first and second ends of the gain structure (310) forming a first and a second optical transition zone (312, 314) of an optical mode between the laser hybrid waveguide (313) and respectively the first and fifth waveguide sections (211,215), the ph device otonic (1) being thus formed, during said formation of the structure, the first part (el) of the thickness of the third section on which the structuring is arranged being separated from the first dielectric layer (110) by at least one second part (e2) of the thickness of the third section (213). [12" id="c-fr-0012] 12. A method of manufacturing a photonic device (1) according to claim 11, wherein the step of forming, at least partially in the silicon layer (201), the first waveguide (210) and first to fifth waveguide sections (211, 212, 213, 214, 215) distinct from the first waveguide (210) comprises the following sub-steps: structuring of the silicon layer (201) to form a second part (e2) of thickness of the waveguide (210) and of the first to fifth waveguide sections (211, 212, 213, 214, 215), formation from a layer of complementary silicon of a first part (el) of thickness of the waveguide (210) and of the first to fifth sections of waveguide (211, 212, 213, 214, 215 ). [13" id="c-fr-0013] 13. The manufacturing method according to claim 11 or 12, wherein there is further provided a step of thinning the first dielectric layer (110) between the steps of removing the substrate (100) and forming the gain structure. (310). [14" id="c-fr-0014] 14. The manufacturing method according to claim 13, wherein after the step of thinning the first dielectric layer (110), the first dielectric layer (110) has a thickness less than or equal to 110 nm, the thickness of the first dielectric layer (110) being preferably less than or equal to 90 nm, or even to 70 nm, even to 20 nm. [15" id="c-fr-0015] 15. The manufacturing method according to any one of claims 11 to 14, wherein during the step of forming the gain structure, the gain structure (310) extends longitudinally along an optical propagation axis of the device. optic (1) and the first and second ends of the gain structure (310) have, over at least part of their thickness and in a longitudinal direction moving away from the central portion, a cross section of decreasing width . 5 [0016] 16. Manufacturing method according to any one of claims 11 to 15, which during the step of forming the gain structure, the gain structure (310) extends longitudinally along an optical propagation axis of the optical device (1) and comprises a first semiconductor zone (331) , a second semiconductor zone (341) and the gain medium (321), and 10 in which, for each of the first and second ends of the gain structure, the first semiconductor zone (331), the second semiconductor zone (341) and the gain medium (321) have, over their respective lengths, a section transverse of constant width.
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同族专利:
公开号 | 公开日 CN110265866A|2019-09-20| EP3540878B1|2020-10-14| US10476231B2|2019-11-12| CA3036322A1|2019-09-12| US20190280461A1|2019-09-12| JP2019161229A|2019-09-19| FR3078835B1|2020-04-17| EP3540878A1|2019-09-18|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题 US20070133648A1|2005-12-09|2007-06-14|Fujitsu Limited|Optical device coupling light propagating in optical waveguide with diffraction grating| US20150270684A1|2014-03-19|2015-09-24|Kabushiki Kaisha Toshiba|Semiconductor laser device| EP2988378A1|2014-08-22|2016-02-24|Commissariat à l'Énergie Atomique et aux Énergies Alternatives|Laser device and method for manufacturing such a laser device| CN100444482C|2006-03-09|2008-12-17|南京大学|Method and device for making the semiconductor laser based on reconstruction-equivalent chirp technology| SG11201703333XA|2014-11-10|2017-05-30|Agency Science Tech & Res|An optical device and a method for fabricating thereof| FR3061961B1|2017-01-19|2019-04-19|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE| US9941664B1|2017-03-22|2018-04-10|International Business Machines Corporation|Hybrid III-V on silicon laser device with transverse mode filter| FR3066617A1|2017-05-17|2018-11-23|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PHOTONIC CHIP WITH REFLECTING STRUCTURE FOR OPTICAL PATH FOLDING| FR3071626B1|2017-09-26|2019-11-01|Commissariat A L'energie Atomique Et Aux Energies Alternatives|OPTICAL COUPLING DEVICE FOR A PHOTONIC CIRCUIT.|US10302972B2|2015-01-23|2019-05-28|Pacific Biosciences Of California, Inc.|Waveguide transmission| JP2021071575A|2019-10-30|2021-05-06|沖電気工業株式会社|Optical wavelength filter| CN111596473B|2020-05-22|2021-02-12|联合微电子中心有限责任公司|Method of manufacturing semiconductor device, and semiconductor integrated circuit| CN112152081B|2020-11-26|2021-02-19|武汉敏芯半导体股份有限公司|Hybrid integrated resonant cavity laser and preparation method thereof|
法律状态:
2019-03-29| PLFP| Fee payment|Year of fee payment: 2 | 2019-09-13| PLSC| Publication of the preliminary search report|Effective date: 20190913 | 2020-03-31| PLFP| Fee payment|Year of fee payment: 3 | 2021-03-30| PLFP| Fee payment|Year of fee payment: 4 |
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申请号 | 申请日 | 专利标题 FR1852120|2018-03-12| FR1852120A|FR3078835B1|2018-03-12|2018-03-12|PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE|FR1852120A| FR3078835B1|2018-03-12|2018-03-12|PHOTONIC DEVICE COMPRISING A LASER OPTICALLY CONNECTED TO A SILICON WAVEGUIDE AND METHOD FOR MANUFACTURING SUCH A PHOTONIC DEVICE| US16/291,102| US10476231B2|2018-03-12|2019-03-04|Photonic device comprising a laser optically connected to a silicon waveguide and method for manufacturing such a photonic device| CA3036322A| CA3036322A1|2018-03-12|2019-03-08|Photonic device including a laser optically connected to a wave guide and fabrication process of such a photonic device| EP19161903.0A| EP3540878B1|2018-03-12|2019-03-11|Photonic device including a laser optically connected to a silicon waveguide and method for manufacturing such a photonic device| CN201910180915.8A| CN110265866A|2018-03-12|2019-03-11|Photonic device and manufacturing method including being optically connected to the laser of silicon waveguide| JP2019043728A| JP2019161229A|2018-03-12|2019-03-11|Photonic device comprising laser optically connected to silicon waveguide and method for manufacturing such photonic device| 相关专利
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